Resistive switching in diamondoid thin film
WebIn this study, the variations in the resistive switching mode of the epitaxial brownmillerite SrFeO 2.5 thin film in the device were studied by systematically controlling the oxygen concentration, which could be varied by changing the compliance current during the first electroforming step. WebApr 10, 2024 · Resistive random-access memory has great application prospects in developing nonvolatile memory and artificial synapse devices. In this work, lanthanum (La) doped hafnium dioxide (HfO 2) (La: HfO 2) thin film is fabricated by sol-gel deposition.Using gold (Au) and lanthanum nickelate (LaNiO 3) as electrodes, the resistive switching …
Resistive switching in diamondoid thin film
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WebApr 1, 2024 · Download Citation On Apr 1, 2024, Wu-Wen-Bo Zhang and others published Resistive switching performance and synaptic behavior of La-doped HfO2 thin film Find, read and cite all the research you ... WebThe electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally and showed non-symmetric …
WebAug 4, 2024 · candidates for the resistive switching layer. The results show that the ratio of HRS to LRS exceeded 100 in the HfO2-based-non-flexible structure, with excellent … WebMay 15, 2016 · The intrinsic threshold switching (TS) responses of AsTeSi thin film are investigated for the potential application as a selector device in memory array. The non-equilibrium population of carriers in shallow traps by non-uniform electric field distribution along the film leads to TS behavior, which determines the switching parameters such as …
Webcomposed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li … WebDiamondoid molecules ... in order to reduce crystal grain size or/and surface roughness of LiNb0.5Ta0.5O3 thin films while ... VERTICAL ARRAY OF RESISTIVE SWITCHING …
WebIts memory characteristics are significantly affected by the resistive-switching mechanism. However, to date, the reported mechanisms are very diverse and scattered, and to our …
WebTransition metal oxide thin films have attracted increasing attention due to their potential in non-volatile resistive random access memory (RRAM) devices, where such thin films are … cache referencing guideWebMay 30, 2024 · unipolar resistive switching processes in TiO 2 thin film grown by atomic layer deposition Vikas Kumar Sahu, Amit K Das, R S Ajimsha et al.-Nonvolatile Resistive … cache_redis_urlWebAbstract: Electrical properties of silver selenide (Ag 2 Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from -7 to +7 V at room temperature. In addition, the Ag/Ag 2 Se/Au structure was compared with the Ag 2 Se/Au structure. It was … clutter adhdWebthin lms A. Jantayod 1,2 , D. Doonyapisut 2 , T. Eknapakul 2 , M. F. Smith 2* & W. Meevasana 2,3,4 The electrical transport properties of a thin lm of the diamondoid adamantane, … cache referentiesWebMar 1, 2024 · In this work, a thin Al buffer layer was embedded in HfO x film to improve its switching behavior. To investigate the role of the interfacial layer on the switching performance of the film, the micro-structure and chemical composition in and near the interface of the HfO x film was analyzed by XPS and TEM. Larger oxygen-deficiency of the … clutter adjectiveWebResistive switching phenomenon in metal oxides such as NiO,1–4 TiO 2, 5,6 ZrO 2, 7 Cu xO, 8 and Al xO y 5,9 attracts great interest for a possible application in nonvolatile memory … cache regard jardinWebElectrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in … clutter actor